? electrical datasheet* GB50SLT12-CAL ? sept 2014 http://www.genesicsemi.com/high-temperat ure-sic/high-temperature-sic-bare-die/ page 1 of 2 silicon carbide power schottky diode chip features ? 1200 v schottky rectifier ? 175 c maximum operating temperature ? positive temperature coefficient of v f ? fast switching speeds ? superior figure of merit q c /i f advantages applications ? improved circuit efficienc y (lower overall cost) ? significantly reduced switching losses compare to si pin diodes ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ? low reverse recovery current ? low device capacitance ? ? high voltage multipliers ? military power supplies maximum ratings at t j = 175 c, unless otherwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 1200 v continuous forward current i f t c = 25 c 100 a continuous forward current i f t c 135 c 50 a rms forward current i f ( rms ) t c 135 c 87 a surge non-repetitive forward current, half sine wave i f,sm t c = 25 c, t p = 10 ms 350 a t c = 135 c, t p = 10 ms 313 non-repetitive peak forward current i f,max t c = 25 c, t p = 10 s 1625 a i 2 t value i 2 dt t c = 25 c, t p = 10 ms tbd a 2 s power dissipation p tot t c = 25 c 620 w operating and storage temperature t j , t stg -55 to 175 c electrical characteristics at t j = 175 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. diode forward voltage v f i f = 50 a, t j = 25 c 1.35 1.6 1.8 v i f = 50 a, t j = 175 c 2.05 2.6 3.0 reverse current i r v r = 1200 v, t j = 25 c 200 1000 a v r = 1200 v, t j = 175 c 400 3000 total capacitive charge q c i f i f,max di f /dt = 200 a/ s t j = 175 c v r = 400 v 158 nc switching time t s v r = 400 v 50 ns total capacitance c v r = 1 v, f = 1 mhz, t j = 25 c 2940 pf v r = 400 v, f = 1 mhz, t j = 25 c 203 v r = 1000 v, f = 1 mhz, t j = 25 c 142 *for chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with genesic semiconductor). v rrm = 1200 v v f = 1.6 v i f (tc = 25c) = 100 a q c = 158 nc
? electrical datasheet* GB50SLT12-CAL ? sept 2014 http://www.genesicsemi.com/high-temperat ure-sic/high-temperature-sic-bare-die/ page 2 of 2 figure 1: typical forward characteristics figure 2: typical reverse characteristics figure 3: typical junction capacitance vs reverse voltage characteristics figure 4: typical switching energy vs reverse voltage characteristics revision history date revision comments supersedes 2014/09/12 2 updated electric al characteristics 2013/11/12 1 updated electric al characteristics 2013/09/18 0 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. reserves right to make changes to the product specificat ions and data in this document without noti ce. genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or i mplied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic cont rol and weapons systems, nor in applications where their failure may result in death , personal injury and/or property damage.
? GB50SLT12-CAL ? sept 2014 http://www.genesicsemi.com/high-temperat ure-sic/high-temperature-sic-bare-die/ page 1 of 1 ? spice model parameters copy the following code into a spice software program for simulation of the GB50SLT12-CAL device. * model of genesic semiconductor inc. * * $revision: 1.0 $ * $date: 04-sep-2013 $ * * genesic semiconductor inc. * 43670 trade center place ste. 155 * dulles, va 20166 * http://www.genesicsemi.com/index.php/hit-sic/baredie * * copyright (c) 2013 genesic semiconductor inc. * all rights reserved * * these models are provided "as is, where is, and with no warranty * of any kind either expressed or implied, including but not limited * to any implied warranties of merchantability and fitness for a * particular purpose." * models accurate up to 2 times rated drain current. * * start of GB50SLT12-CAL spice model * .subckt gb50slt12 anode kathode r1 anode int r=((temp-24)*9.39e-05); temperature dependant resistor d1 int kathode gb50slt12_25c; call the 25c diode model .model gb50slt12_25c d + is 1.99e-16 rs 0.015652965 + n 1 ikf 1000 + eg 1.2 xti 3 + cjo 3.86e-09 vj 1.362328465 + m 0.48198551 fc 0.5 + tt 1.00e-10 bv 1200 + ibv 1.00e-03 vpk 1200 + iave 50 type sic_schottky + mfg genesic_semiconductor .ends * * end of GB50SLT12-CAL spice model
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